Wiring board and method for producing same
AssigneeHitachi, Ltd.
InventorsYasunori Narizuka, Mitsuko Itou, Yoshihide Yamaguchi, Hiroyuki Tenmei
Life of this patent
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Abstract
The invention relates to a wiring board comprising a board having an electrode and being coated with an insulation layer with a hole for exposing the electrode; a wiring comprising a Cr or Ti layer, which is connected to the electrode and closely contacts with the insulation layer, and of a Cu layer which is closely contacts with the Cr or Ti layer; a protective film which covers the wiring and is provided with another hole for soldering; and a solder for the outer connection which is mounted in the both holes and brought to diffuse into the Cu layer to produce an alloy, and brought to reach the Cr or Ti layer thereby connecting the solder to the Cr or Ti layer.
Claims30
A wiring board comprising:
- an insulation layer formed on the wiring board;
- and
- a wiring comprising a Cu layer and a Cr or Ti layer which is arranged between the Cu layer and the insulation layer under the Cu layer in order to closely connect the Cu layer with the insulation layer,
- wherein a solder for an outer connection is provided on the Cu layer and brought to diffuse into the Cu layer to produce an alloy, and brought to reach the Cr or Ti layer thereby connecting the solder to the Cr or Ti layer.
A wiring board comprising:
- a board having disposed thereon an electrode and an insulation layer disposed atop the electrode, the insulation layer having a first opening to expose the electrode;
- a wiring comprising a Cr or Ti layer and a Cu layer in contact with the Cr or Ti layer, the Cr or Ti layer in contact with the electrode and with the insulation layer;
- a protective film which covers the wiring and is provided with a second opening;
- and
- a solder for the outer connection disposed in the second opening and brought to diffuse into the Cu layer to produce an alloy, and brought to reach the Cr or Ti layer thereby connecting the solder to the Cr or Ti layer.
A method of producing a wiring board, which comprises the following steps:
- a step of forming an insulation layer on a wiring board;
- a step of forming a wiring, in which a Cr or Ti layer and a Cu layer are laminated on the insulation layer;
- and
- a reflow bonding step, in which a solder for an outer connection is provided on the Cu layer and brought to diffuse into the Cu layer to produce an alloy, and brought to reaches the Cr or Ti layer thereby connecting the solder to the Cr or Ti layer.
A method of producing a wiring board, which comprises the following steps:
- a step of forming an insulation film, which comprises coating a wiring board having an electrode by the insulation film and forming an opening in the insulation film in order to expose the electrode;
- a step of forming a wiring, in which a Cr or Ti layer is connected to the electrode and in physical contact with the insulation film, and in which a Cu layer is disposed on the Cr or Ti layer;
- a step of forming a protective film, which comprises coating the wiring with the protective film and forming an opening in the protective film for soldering;
- and
- a reflow bonding step, in which a solder for the outer connection is provided within the opening of the protective film and caused to diffuse into the Cu layer in the wiring to produce an alloy and to reach the Cr or Ti layer thereby connecting the solder to the Cr or Ti layer.
A semiconductor device comprising:
- a semiconductor board having an electrode and being coated with an insulation layer being formed with an opening in order to expose the electrode;
- a wiring comprising a Cr or Ti layer which is in close contact with the insulation layer and of a Cu layer which is closely laminated on the Cr or Ti layer;
- a protective film covering the wiring and being formed with an opening for soldering;
- and
- a solder for an outer connection which is provided within the opening of the protective film and brought to diffuse into the Cu layer in the wiring to produce an alloy and brought to reach the Cr or Ti layer thereby connecting the solder to the Cr or Ti layer.
A semiconductor device comprising:
- a first wiring board;
- a second wiring board;
- and
- an amount of solder disposed between the first wiring board and the second wiring board,
- wherein each of the wiring boards comprises:
- a substrate;
- an insulation layer disposed on the substrate;
- and
- a wiring comprising a first layer of Cr or Ti, a second layer of Cu, and a third layer of Cr or Ti, wherein the first layer is disposed adjacent the insulation layer and the second layer is disposed between the first layer and the third layer,
- wherein the solder is in contact with a portion of the wiring on the first wiring board such that that the solder is diffused into its second layer and through it to form an electrical contact with its first layer,
- wherein the second wiring board includes an opening formed through the its substrate and through its insulation layer,
- wherein the solder is disposed in the opening of the substrate and the insulation layer of the second wiring board, the solder contacting a portion of the wiring of the second wiring board such that the solder is diffused into its second layer and through it to form an electrical contact with its third layer.
Dependencies are inferred from the claim text.