Low dielectric constant film produced from silicon compounds comprising silicon-carbon bonds

A structure comprising:

• a first dielectric layer having a first portion of a contact/via therein;
• a first oxidized organosilane layer on the first dielectric layer, the first oxidized organosilane layer having a second portion of the contact/via therein;
• a second dielectric layer on the first oxidized organosilane layer, the second dielectric layer having a third portion of the contact/via therein;
• and
• a second oxidized organosilane layer on the second dielectric layer, the second oxidized organosilane layer having an interconnect therein, wherein the interconnect and the contact/via form a metallization structure comprising a conductive material, and wherein the first oxidized organosilane layer and the second oxidized organosilane layer comprise silicon, oxygen, and from 1 to 50% carbon by atomic weight.