Through-via vertical interconnects, through-via heat sinks and associated fabrication methods

A method for fabricating through-via vertical interconnects, the method comprising the steps of:

• forming at least one via in a substrate, the at least one via defining a via surface that extends from a first generally planar surface of the substrate to a second generally planar surface of the substrate;
• disposing an organic dielectric layer on the via surface of the at least one via;
• disposing a first conductive interconnect layer on the dielectric layer such that the conductive interconnect layer forms a through-via electrical interconnect between the first generally planar surface of the substrate and the second generally planar surface of the substrate;
• and
• maintaining the substrate at a temperature of below about 300 degrees while disposing the organic dielectric layer and the first conductive layer.

A through-via vertical interconnect device, the device comprising:

• a substrate having at least one via formed therein, the at least one via defining a via surface that extends from a first generally planar surface of the substrate to a second generally planar surface of the substrate;
• an organic dielectric layer disposed on the via surface of the at least one via, the organic dielectric layer being disposed while the substrate is held at a temperature of less than about 300 degrees Celsius;
• and
• a first conductive layer disposed on the dielectric layer that forms a through-via vertical interconnect between the first generally planar surface of the substrate and the second generally planar surface of the substrate, the first conductive layer the dielectric layer being disposed while the substrate is held at a temperature of less than about 300 degrees Celsius.