Method of radiation generation and manipulation
AssigneeSensor Electronic Technology, Inc.
InventorsMichael Shur, Victor Ryzhii, Remigijus Gaska
Life of this patent
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Abstract
A method of managing radiation having a frequency in the terahertz and/or microwave regions. The method comprises providing a semiconducting device having a two-dimensional carrier gas. Plasma waves are generated in the carrier gas using a laser pulse. The frequency of the plasma waves, and as a result, the generated radiation are adjusted using a voltage applied to the semiconducting device.
Claims20
A method of managing radiation, the method comprising:
- providing a semiconducting device having a two-dimensional carrier gas;
- exciting the carrier gas using a laser pulse having a duration of approximately one femtosecond to ten picoseconds;
- and
- adjusting a frequency of the radiation using a voltage applied to the semiconducting device.
A method of generating radiation using a field effect transistor, the method comprising:
- shining a laser pulse onto the field effect transistor;
- and
- adjusting a frequency of the radiation by adjusting a carrier density of carriers in a channel of the field effect transistor.
A method of generating radiation using a heterodimensional diode, the method comprising:
- shining a laser pulse onto at least one of a top side and a bottom side of the heterodimensional diode;
- and
- adjusting a frequency of the radiation using a voltage applied to the heterodimensional diode.
Dependencies are inferred from the claim text.