Semiconductor device and method for manufacturing semiconductor device
AssigneeSeiko Epson Corporation
InventorToshihiko Miyazaki
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Abstract
A semiconductor device includes a silicon substrate and a gate dielectric film provided on the silicon substrate. The gate dielectric film includes at least a first oxide film and an oxynitride film formed on the first oxide film. A peak position of a concentration of nitrogen of the gate dielectric film is located in a range of 0.5 nm-1.5 nm from a surface thereof, and in a range of 0.3 nm-2.0 nm from an interface thereof with the silicon substrate, and an element concentration peak of the nitrogen is 7×1021 or greater.
Claims20
A semiconductor device, comprising:
- a silicon substrate;
- and
- a gate dielectric film provided on the silicon substrate, the gate dielectric film includes at least a first oxide film and an oxynitride film formed on the first oxide film,
- wherein a peak position of a concentration of nitrogen of the gate dielectric film is located in a range of 0.5 nm-1.5 nm from a surface thereof, and in a range of 0.3 nm-2.0 nm from an interface thereof with the silicon substrate, and an element concentration peak of the nitrogen is 7×1021 or greater.
A method for manufacturing a semiconductor device, comprising:
- forming an oxynitride film on a surface of a silicon substrate by performing a heat treatment on the silicon substrate in an oxynitriding gas under a condition in a range of 1000° C.-1150° C. for 120-200 seconds;
- and
- forming a first oxide film on the surface of the silicon substrate by conducting a heat treatment on the silicon substrate in a first oxidizing gas.
A semiconductor device, comprising:
- a silicon substrate;
- and
- means for reducing an amount of gate leakage, wherein a peak position of a concentration of nitrogen of the means for reducing an amount of gate leakage is located in a range of 0.5 nm-1.5 nm from a surface thereof, and in a range of 0.3 nm-2.0 nm from an interface thereof with the silicon substrate, and an element concentration peak of nitrogen is 7×1021 or greater.
Dependencies are inferred from the claim text.