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US 2004/0201067 A1Published application
LLD structure of thin film transistor
AssigneeToppoly Optoelectronics Corp.
InventorAn Shih
Life of this patent
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Abstract
A thin film transistor having a single LDD structure with a halo structure is provided. The single LDD structure is disposed between source/drain structures, and having a first side adjacent to a first one of the source/drain structures and a second side spaced from a second one of the source/drain structures by essentially a semiconductor material. The halo structure is adjacent to the LDD structure partially or largely covering the LDD structure.
Claims15
A thin film transistor, comprising:
- a semiconductor layer formed of polycrystalline silicon;
- source/drain structures formed apart from each other in said semiconductor layer;
- a single LDD structure disposed between said source/drain structures, and having a first side adjacent to a first one of said source/drain structures and a second side opposed to said first side;
- a halo structure having a third side adjacent to said second side of said LDD structure, and a fourth side spaced from a second one of said source/drain structures by said semiconductor material;
- a gate structure formed over said semiconductor layer;
- and
- an insulator layer disposed between said semiconductor layer and said gate electrode for insulating said gate electrode from said source/drain structures and said LDD and said halo structures.
4 more elements
A thin film transistor, comprising:
- a semiconductor layer formed of a semiconductor material;
- source/drain structures formed apart from each other in said semiconductor layer;
- a single LDD structure disposed between said source/drain structures, and having a first side adjacent to a first one of said source/drain structures and a second side opposed to said first side;
- a halo structure having a third side adjacent to said second side of said LDD structure, and a fourth side spaced from a second one of said source/drain structures by said semiconductor material;
- a gate structure formed over said semiconductor layer;
- and
- an insulator layer disposed between said semiconductor layer and said gate electrode for insulating said gate electrode from said source/drain structures and said LDD and said halo structures,
- wherein said thin film transistor is of an N-type, said LDD structure contains a doping material selected from a group consisting of P ions, As ions, PHx ions, AsHx ions and a combination thereof, and said halo structure contains more than one_doping material selected from a group consisting of B ions, BHx ion, B2Hx ions and a combination thereof.
5 more elements
A thin film transistor, comprising:
- a semiconductor layer formed of polycrystalline silicon;
- source/drain structures formed apart from each other in said semiconductor layer;
- a single LDD structure disposed between said source/drain structures, and having a first side adjacent to a first one of said source/drain structures and a second side opposed to said first side;
- a halo structure having a third side adjacent to said second side of said LDD structure, and a fourth side spaced from a second one of said source/drain structures by said semiconductor material;
- a gate structure formed over said semiconductor layer;
- and
- an insulator layer disposed between said semiconductor layer and said gate electrode for insulating said gate electrode from said source/drain structures and said LDD and said halo structures,
- wherein at least a portion of said LDD structure is exposed from said halo structure and said first one of source/drain structure.
5 more elements
Dependencies are inferred from the claim text.