Lateral double-diffused MOS transistor having multiple current paths for high breakdown voltage and low on-resistance

A lateral double-diffused MOS (LDMOS) transistor comprising:

• a semiconductor substrate formed of a material having first conductivity type impurities;
• a drift region formed of a material having second conductivity type impurities on the semiconductor substrate;
• a first buried layer formed of a material having first conductivity type impurities and a second buried layer formed of a material having second conductivity type impurities, which are arranged at the boundary between the semiconductor substrate and the drift region;
• a first well region formed of a material having first conductivity type impurities to contact the first buried layer in a first portion of the drift region;
• a first source region formed of a material having second conductivity type impurities in a predetermined upper region of the first well region;
• a drain region formed of a material having second conductivity type impurities in a predetermined region of the drift region, the drain region being spaced a predetermined distance from the first well region;
• a third buried layer formed of a material having first conductivity type impurities in a second portion of the drift region, the third buried layer being overlapped with a part of an upper portion of the first buried layer;
• a second well region formed of a material having first conductivity type impurities in the second portion of the drift region, the second well region being overlapped with the third buried layer;
• a second source region formed of a material having second conductivity type impurities in a predetermined upper portion of the second well region;
• a gate insulating layer formed in a first channel region inside the first well region and in a second channel region inside the second well region;
• a gate electrode formed on the gate insulating layer;
• a source electrode formed to be electrically connected to the first source region and the second source region;
• and
• a drain electrode formed to be electrically connected to the drain region.