Programmable memory devices supported by semiconductor substrates

A programmable memory device supported by a semiconductor substrate and comprising:

• a floating gate over the substrate;
• a dielectric material over the floating gate;
• a mass consisting essentially of W over the dielectric material, the mass comprising a pair of opposing sidewalls;
• and
• a pair of sidewall spacers along the opposing sidewalls of the mass, the sidewall spacers comprising a first layer consisting essentially of WNx and a second layer different from the first layer.

A programmable memory device supported by a semiconductor substrate and comprising:

• a floating gate over the substrate;
• a dielectric material over the floating gate;
• a mass consisting essentially of W over the dielectric material;
• the mass comprising a pair of opposing sidewalls;
• and
• a pair of sidewall spacers along the opposing sidewalls of the mass;
• the sidewall spacers comprising a first layer consisting essentially of one or more nitride compounds and a second layer different from the first layer, wherein the second layer consists essentially of silicon.

A programmable memory device supported by a semiconductor substrate and comprising:

• a floating gate over the substrate;
• a dielectric material over the floating gate;
• a first layer consisting essentially of WNx over the dielectric material;
• a mass consisting essentially of W over the first layer;
• a second layer consisting essentially of one or more nitride compounds over the mass;
• the mass, first layer and second layer being comprised by a stack having a pair of opposing sidewalls;
• and
• a pair of sidewall spacers along and physically against the opposing sidewalls of the stack, the sidewall spacers comprising a first portion and a second portion different from the first portion, wherein the first portion consists essentially of WNx.

A programmable memory device supported by a semiconductor substrate and comprising:

• a floating gate over the substrate;
• a dielectric material over the floating gate;
• a first layer consisting essentially of WNx over the dielectric material;
• a mass consisting essentially of W over the first layer;
• a second layer consisting essentially of one or more nitride compounds over the mass;
• the mass, first layer and second layer being comprised by a stack having a pair of opposing sidewalls;
• and
• a pair of sidewall spacers along and physically against the opposing sidewalls of the stack, the sidewall spacers comprising a first portion consisting essentially of one or more nitride compounds and a second portion different from the first portion, wherein the second portion consists essentially of silicon.