Semiconductor integrated circuit device
AssigneeNEC Electronics Corporation
InventorYasutaka Nakashiba
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Abstract
A semiconductor integrated circuit device includes a P type substrate. An N-channel MOS transistor, a P-channel MOS transistor, and an MOS type varactor element are provided in the upper surface of the P type substrate. A gate insulating film of the MOS type varactor element is thinner than gate insulating films of the N-channel MOS transistor and the P-channel MOS transistor. Also, a maximum gate voltage applied between a well terminal and a gate terminal of the MOS type varactor element is lower than a maximum gate voltage applied to the N-channel MOS transistor and the P-channel MOS transistor.
Claims4
A semiconductor integrated circuit device comprising:
- a substrate;
- MOS transistors which are disposed in said substrate and which include gate insulating films;
- and
- an MOS type varactor element which is disposed in said substrate and which includes a gate insulating film, the thickness thereof being thinner than the thinnest gate insulating film among said gate insulating films of said MOS transistors.
Dependencies are inferred from the claim text.