Electronic device with barium fluoride substrate
OwnerKiki Ikossiinventor
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Abstract
A high frequency, low power dissipation electronic device capable of operating at low voltage, and optoelectronic devices which includes a barium fluoride substrate, particularly BaF2 substrate having crystallographic (100) contact surface, and at least two semiconducting layers disposed thereon particularly selected from compounds of elements of Groups II, III, IV, V and VI of the Periodic Table.
Claims25
An electronic device comprising a BaF2 substrate and at least two semiconducting layers disposed on said substrate.
An electronic device capable of operating at high frequency in the T Hz region, at low power loss that is at least 50% less that of any prior art device, and at low voltage of below 1 volt, the device comprising a BaF2 contact substrate surface that is face centered cubic and its crystallographic structure is (100) and at least two semiconducting layers disposed thereon
Dependencies are inferred from the claim text.