Semiconductor laser element and optical data recording device
AssigneeSharp Kabushiki Kaisha
InventorsYukio Yamasaki, Shigetoshi Ito
Life of this patent
Estimating the term…
Loading patent…
AssigneeSharp Kabushiki Kaisha
InventorsYukio Yamasaki, Shigetoshi Ito
Estimating the term…
A semiconductor laser element has the following structure. In the clad layer, a difference in a light radiation loss between the basic horizontal-lateral mode and the 1st-order horizontal-lateral mode is 10 cm−1 or more. The refractive index of the clad layer is below an effective index against light in the basic horizontal-lateral mode, and the refractive index of the clad layer is equal to or more than an effective index against light in the 1st-order horizontal-lateral mode. The upper clad layer is provided only above a portion of the active layer, and thus is at least included in the ridge-stripe structure. This structure inhibits the I-L characteristic from suffering kink and realizes oscillations in the basic horizontal-lateral mode until output power reaches as high as 60-100 mW, in a peak output power of the semiconductor laser element at the time of a pulse current operation. This structure also enables the FFP to have an ellipticity of close to 1, thus making the spot of the semiconductor laser element close to a circular shape.
A semiconductor laser element having a ridge-stripe structure for confining light in a horizontal direction, the element comprising:
A semiconductor laser element having a ridge-stripe structure for confining light in a horizontal direction, the element comprising:
An optical data recording device for recording data in a light recording medium, the data provided in an electrical signal, the device comprising:
An optical data recording device for recording data in a light recording medium, the data provided in an electrical signal, the device comprising:
Dependencies are inferred from the claim text.