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US 2004/0201030 A1Published application
GaN growth on Si using ZnO buffer layer
AssigneeUniversity of Florida
InventorsOlga Kryliouk, Tim Anderson, Kee Chan Kim
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Abstract
A method for forming group III-N articles includes the steps of providing a single crystal silicon substrate, depositing a zinc oxide (ZnO) layer on the substrate, and depositing a single crystal group III-N layer on the ZnO layer. At least a portion of the group III-N layer is deposited at a temperature of less than 600° C.
Claims19
A layered group III-N article, comprising:
- a silicon single crystal substrate;
- a single crystal zinc oxide (ZnO) buffer layer disposed on and in contact with said substrate, and
- a single crystal group III-N layer disposed on said ZnO buffer layer.
The article of claim 5, wherein said thickness is less than 100 angstroms.
A light-emitting diode (LED), comprising:
- a silicon (111) single crystal substrate;
- a zinc oxide (ZnO) comprising layer on said substrate;
- a single crystal group HI-nitride semiconductor epitaxial layer on said ZnO layer, and
- an active layer on said group III-nitride layer.
1 more element
A method for forming group III-N based articles, comprising the steps of:
- providing a single crystal silicon substrate;
- depositing a single crystal zinc oxide (ZnO) layer on said substrate, and
- depositing a single crystal group III-N layer on said ZnO layer, wherein at least a portion of said step of depositing group III-N layer is performed at a temperature of less than 600° C.
Dependencies are inferred from the claim text.