Semiconductor device and method for producing the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsKeiji Yamane, Tetsuo Ueda, Takashi Miyamoto, Isao Kidoguchi
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Abstract
A method for producing a semiconductor device of the present invention includes forming a surface electrode on a semiconductor element, forming a solder layer by plating on one principal surface of the surface electrode, mounting the semiconductor element on the sub-mount so that the solder layer contacts a principal surface of the sub-mount, and bonding the sub-mount and the semiconductor element to each other via the solder layer.
Claims31
A method for producing a semiconductor device, comprising:
- forming a surface electrode on a semiconductor element;
- forming a solder layer by plating on one principal surface of the surface electrode;
- placing the semiconductor element on a sub-mount so that the solder layer contacts a principal surface of the sub-mount;
- and
- bonding the sub-mount and the semiconductor element to each other via the solder layer.
A semiconductor device having a sub-mount and a semiconductor element bonded to each other via a solder layer, comprising:
- a surface electrode formed on a principal surface of the semiconductor element on the sub-mount side;
- the solder layer partially formed on the surface electrode;
- and
- a covering layer formed over an entire surface of the solder layer,
- wherein a part of the surface electrode is exposed.
Dependencies are inferred from the claim text.