Semi-Insulating Silicon Carbide Produced by Neutron Transmutation Doping
AssigneeCree, Inc.
InventorsValeri F. Tsvetkov, Hudson M. Hobgood, Calvin H. Carter JR., Jason R. Jenny
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Abstract
A method is disclosed for producing highly uniform semi-insulating characteristics in single crystal silicon carbide for semiconductor applications. The method includes irradiating a silicon carbide single crystal having net p-type doping and deep levels with neutrons until the concentration of 31P equals or exceeds the original net p-type doping while remaining equal to or less than the sum of the concentration of deep levels and the original net p-type doping.
Claims49
A method of producing highly uniform semi-insulating characteristics in single crystal silicon carbide for semiconductor applications, the method comprising:
- irradiating a silicon carbide single crystal having net p-type doping and deep levels with neutrons until the concentration of 31P equals or exceeds the original net p-type doping while remaining equal to or less than the sum of the concentration of deep levels and the original net p-type doping.
A method of producing highly uniform semi-insulating characteristics in single crystal silicon carbide for high frequency semiconductor devices and related applications, the method comprising:
- irradiating a silicon carbide crystal that has a nitrogen concentration of 5E16 or less and a concentration of deep level trapping elements of 1E16 or less and a known concentration of net p-type doping above 1E14 with neutrons until the concentration of 31P exceeds the concentration of the net p-type doping, and the number of deep levels in the crystal exceeds the net difference between the concentration of the 31P and the net p-type doping;
- and
- thereby produce a compensated, semi-insulating silicon carbide crystal.
A semi-insulating silicon carbide single crystal comprising:
- (i) a net p-type doping of between about 1E13 and 1E16 cm−3;
- (ii) a concentration of deep levels greater than 1E12 cm−3;
- (iii) a concentration of P of between about 1E13 and 1E16 cm−3;
- and
- (iv) a resistivity of at least about 5000 ohm-centimeters.
Dependencies are inferred from the claim text.