Polysilicon thin film transistor array panel and manufacturing method thereof

A thin film transistor array panel comprising:

• an insulating substrate including a plurality of pixel areas;
• a plurality of polysilicon members provided on the pixel areas;
• a gate insulating layer formed on the polysilicon members;
• a gate wire formed on the gate insulating layer;
• a first interlayer insulating layer formed on the gate wire;
• a data wire formed on the first interlayer insulating layer and intersecting the gate wire to define the pixel areas;
• a second interlayer insulating layer formed on the data wire;
• and
• a plurality of pixel electrodes formed on the second interlayer insulating layer and disposed in the pixel areas,
• wherein the substrate includes a plurality of groups of divisional areas, each divisional area provided with the polysilicon members having substantially the same driving capacity, the polysilicon members in the divisional areas in one of the groups have different driving capacities, and the divisional areas in the different groups are mixed.

A method of manufacturing a thin film transistor array panel, the method comprising:

• depositing an amorphous silicon layer on an insulating substrate;
• converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask;
• forming a gate insulating layer on the polysilicon layer;
• forming a plurality of gate lines on the gate insulating layer;
• forming a first interlayer insulating layer on the gate lines;
• forming a plurality of data lines on the first interlayer insulating layer;
• forming a second interlayer insulating layer on the data lines;
• and
• forming a plurality of pixel electrodes on the second interlayer insulating layer,
• wherein the mask comprises a plurality of transmitting areas and a plurality of blocking areas arranged in a mixed manner.

A silicon crystallization method comprising:

• depositing an amorphous silicon layer on an insulating substrate;
• melting the amorphous silicon layer by illuminating a laser beam through a mask including a plurality of transmitting areas and a plurality of blocking areas;
• and
• crystallizing the melted amorphous silicon layer,
• wherein at least a boundary of the blocking areas and the transmitting areas has a stepwise shape.

A mask for silicon crystallization using a laser beam, the mask comprising:

• a plurality of transmitting areas for transmitting the laser beam;
• and
• a plurality of blocking areas for blocking the laser beam,
• wherein at least a boundary of the transmitting areas and the blocking areas has a stepwise shape.

A method of manufacturing an electroluminescent display device including a plurality of switching thin film transistors, a plurality of driving thin film transistors, and a plurality of organic light emitting members, the method comprising:

• depositing an amorphous silicon layer for the driving thin film transistors;
• melting the amorphous silicon layer by illuminating a laser beam through a mask including a plurality of transmitting areas and a plurality of blocking areas;
• and
• crystallizing the melted amorphous silicon layer,
• wherein at least a boundary of the blocking areas and the transmitting areas has a stepwise shape.