Asymmetry thin-film transistor
AssigneeAu Optronics Corporation
InventorKun-Hong Chen
Life of this patent
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Abstract
An asymmetry thin-film transistor includes a substrate, a semiconductor layer and a gate positioned on the substrate. The semiconductor layer includes a first lightly doped region and a first heavily doped region adjacent to a first gate side, and a second lightly doped region together with a second heavily doped region adjacent to a second gate side. A first junction is between the first lightly doped region and the first heavily doped region. A second junction is between the second lightly doped region and the second heavily doped region. A distance between the first junction and the first gate side is unequal to a distance between the second junction and the second gate side.
Claims24
An asymmetry thin-film transistor comprising:
- a substrate;
- a semiconductor layer positioned on the substrate, the semiconductor layer comprising a channel region, a first lightly doped region and a first heavily doped region positioned at a side of the channel region, a second lightly doped region and a second heavily doped region positioned at the other side of the channel region, a first junction being formed between the first lightly doped region and the first heavily doped region, and a second junction being formed between the second lightly doped region and the second heavily doped region;
- and
- a gate positioned on the substrate, the gate comprising a first gate side and a second gate side, a distance between the first gate side and the first junction being unequal to a distance between the second gate side and the second junction.
An asymmetry thin-film transistor comprising:
- a substrate;
- a semiconductor layer positioned on the substrate, the semiconductor layer comprising a channel region, a single lightly doped region and a first heavily doped region positioned at a side of the channel region, and a second heavily doped region positioned at the other side of the channel region;
- and
- a gate positioned on the substrate.
Dependencies are inferred from the claim text.