Polythiophenes and devices thereof

A thin film transistor containing a polythiophene

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• wherein R represents a side chain, m represents the number of R substituents;
• A is a divalent linkage;
• x, y and z represent, respectively, the number of Rm substituted thienylenes, unsubstituted thienylenes, and divalent linkages A in the monomer segment subject to z being 0 or 1, and n represents the number of repeating monomer segments in the polymer or the degree of polymerization, and which device is comprised of a substrate, a gate electrode, a gate dielectric layer, a source electrode and a drain electrode, and in contact with the source/drain electrodes and further the gate dielectric layer a semiconductor layer comprised of said polythiophene wherein R is an alkyl, alkoxyalkyl, a perhaloalkyl, or a polyether;
• A is a divalent linkage selected from the group consisting of arylene of about 6 to about 40 carbon atoms;
• m is 1 or 2;
• x and y are the number of the R substituted thienylenes and the unsubstituted thienylene moieties, respectively, each of which are from 1 to 5;
• z is zero or 1, and represents the number of divalent linkages;
• and wherein n is a number of from about 5 to about 2,000.