Infrared photodetector

An infrared photodetector, comprising:

• a conducting layer;
• a p-type semiconductor layer comprising at least one layer of quantum structure for confining a carrier in a barrier;
• an insulating layer formed between said conducting layer and said p-type semiconductor layer;
• and
• a voltage source with a positive electrode connected to said conducting layer and with a negative electrode connected to said p-type semiconductor layer for providing a bias voltage to generate a quantum tunneling effect, such that said carrier penetrates through said insulating layer to form a current;
• wherein when irradiated by an infrared, said carrier in said barrier absorbs the energy of said infrared to jump out of said barrier and is collected by said electrode to form a photocurrent.

An infrared photodetector, comprising:

• a conducting layer;
• an n-type semiconductor layer comprising at least one layer of quantum structure for confining a carrier in a barrier;
• an insulating layer formed between said conducting layer and said n-type semiconductor layer;
• and
• a voltage source with a negative electrode connected to said conducting layer and with a positive electrode connected to said n-type semiconductor layer for providing a bias voltage to generate a quantum tunneling effect, such that said carrier penetrates through said insulating layer to form a current;
• wherein when irradiated by an infrared, said carrier in said barrier absorbs the energy of said infrared to jump out of said barrier and is collected by said electrode to form a photocurrent.