Method and apparatus for forming interconnects, and polishing liquid and polishing method
OwnerAkihisa Hongo, Naoki Matsuda +2inventors
InventorsAkihisa Hongo, Naoki Matsuda, Kanji Ohno, Ryoichi Kimizuka
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Abstract
A method and apparatus for forming interconnects embedding a metal such as copper (Cu) into recesses for interconnects formed on the surface of a substrate such as a semiconductor substrate. The method includes providing a substrate having fine recesses formed in the surface, subjecting the surface of the substrate to plating in a plating liquid, and subjecting the plated film formed on the surface of the substrate to electrolytic etching in an etching liquid.
Claims19
1-47. (cancele)
A method for forming interconnects on a substrate, comprising:
- providing a substrate having fine recesses in a surface of the substrate;
- plating a film of a conductive material on the surface of the substrate in a plating liquid;
- and
- electrolytic-etching a surface of the plated film formed on the surface of the substrate in an etching liquid.
A method for forming interconnect on a substrate, comprising:
- providing a substrate having a recess in a surface of the substrate, plating the substrate with copper to form a copper film on the surface and to fill copper into the recess of the substrate;
- electrolytic-polishing or chemical-polishing a surface of the copper film on the substrate in a polishing liquid;
- and
- annealing the substrate after said polishing.
A method for forming interconnect on a substrate, comprising:
- providing a substrate having a recess in a surface of the substrate, plating the substrate with copper to form a copper film on the surface and to fill copper into the recess of the substrate;
- annealing the substrate having the copper film thereon;
- and
- electrolytic-polishing or chemical-polishing a surface of the copper film on the substrate in a polishing liquid, after said annealing.
A method for forming interconnect on a substrate, comprising:
- providing a substrate having recesses in a surface of the substrate and a copper film on the surface and in the recesses of the substrate;
- electrolytic-polishing or chemical-polishing a surface of the copper film on the surface of the substrate, where only copper is exposed thereon, in a first polishing liquid in which the dissolution of copper is suppressed;
- and
- electrolytic-polishing or chemical-polishing the surface of the substrate, where only copper is exposed, or copper and a conductive material other than copper are exposed, in a second polishing liquid in which the dissolution of copper is further suppressed than in a first polishing liquid.
A method for forming interconnects on a substrate, comprising:
- providing a substrate having a small recess and a large recess in a surface of the substrate, wherein the surface of the substrate being covered with a seed layer;
- plating a film of a conductive material on a surface of the seed layer with a plating liquid to deposit the conductive material in the small recess and the large recess, said plated film having a raised portion on the small recess;
- and
- electrolytic-etching a surface of the plated film to selectively remove the raised portion on the small recess.
A method for forming interconnects on a substrate, comprising:
- providing a substrate having a recess in a surface of the substrate, wherein the surface of the substrate being covered with a seed layer;
- plating a film of a conductive material on a surface of the seed layer with a plating liquid to deposit the conductive material in the recess, said plated film having a raised portion;
- forming a passivated film on a surface of said raised portion;
- and
- removing the passivated film and the plated film, selectively, of the raised portion.
A method for forming interconnects on a substrate, comprising:
- providing a substrate having a recess in a surface of the substrate, wherein the surface of the substrate being covered with a seed layer;
- plating a film of a conductive material on a surface of the seed layer with a plating liquid to deposit the conductive material in the recess;
- forming a passivated film on a surface of the plated film;
- and
- removing the passivated film and the plated film while leaving the plated film on the recess of the substrate.
Dependencies are inferred from the claim text.