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AssigneeNippon Mining & Metals Co., Ltd.
InventorsAkihiro Aiba, Takeo Okabe, Junnosuke Sekiguchi
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The present invention pertains to an electrolytic copper plating method characterized in employing pure copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating with the pure copper anode having a crystal grain diameter of 10 μm or less or 60 μm or more or a non-recrystallized anode. Provided are an electrolytic copper plating method and a pure copper anode for electrolytic copper plating used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath upon performing electrolytic copper plating, and capable of preventing the adhesion of particles to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion.
An electrolytic copper plating method comprising the steps of employing pure copper as an anode for performing electrolytic copper plating, and performing electrolytic copper plating with said pure copper anode, said anode having a crystal grain diameter of less than 10 μm or 60 μm or more.
2-6. (canceled).
An anode for performing electrolytic copper plating comprising a pure copper anode for use in performing electrolytic copper plating, said pure copper anode having a crystal grain diameter of less than 10 μm or 60 μm or more.
8-14. (canceled).
A semiconductor wafer having low particle adhesion produced by a process comprising the steps of employing pure copper as an anode for performing electrolytic copper plating, and performing electrolytic copper plating with said pure copper anode on a semiconductor wafer, said anode having a crystal grain diameter of less than 10 μm or 60 μm or more.
Dependencies are inferred from the claim text.