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US 2004/0200519 A1Published application
Pb-Ge-Te-compounds for thermoelectric generators or Peltier arrangements
AssigneesBASF SE, Michigan State University
InventorsHans-Josef Sterzel, Klaus Kuhling, Mercouri G. Kanatzidis, Duck-Young Chung
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Abstract
A thermoelectrically active p- or n-conductive semiconductor material is constituted by a ternary compound of the general formula (I) (Pb1-xGex)Te (I) with x value from 0.16 to 0.5, wherein 0 to 10% by weight of the ternary compound may be replaced by other metals or metal compounds, wherein the semiconductor material has a Seebeck coefficient of at least ±200 μV/K at a temperature of 25° C.
Claims10
A thermoelectrically active p- or n-conductive semiconductor material constituted by a ternary compound of the general formula (I)
- (Pb1-xGex)Te (I)
- with x value from 0.16 to 0.5,
- wherein 0 to 10% by weight of the ternary compound may be replaced by other metals or metal compounds, wherein the semiconductor material has a Seebeck coefficient of at least ±200 μV/K at a temperature of 25° C.
Dependencies are inferred from the claim text.