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US 2004/0200414 A1Published application
Method of depositing a metallic film on a substrate
AssigneeOregon Health & Science University
InventorsRajendra Solanki, Balu Pathangey
Life of this patent
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Abstract
The present invention relates to a method of depositing a metallic film on a substrate. This method uses a carrier gas to deposit a source metal in the presence of a reducing agent such that the rate of deposition can be controlled by controlling the flow rate of the carrier gas, the substrate temperature, the pulse widths of the metal source and reducing agents, and the number of deposition phases.
Claims10
-14. (canceled)
A method for etching copper films on a substrate comprising:
- a. placing a substrate having a temperature in the range of 1200 C. to 3000 C. and comprising an upper surface, a lower surface, and silicon in a reaction cell, wherein at least one of said surfaces is coated with a copper layer.
- b. injecting an oxidizing agent into the cell through the use of a carrier gas during a first pulse of 1-20 seconds duration;
- c. injecting purge pulse comprising an inert gas into the cell during a second pulse of 1-10 seconds duration;
- d. injecting a reducing agent into the cell during a third pulse of 1-10 seconds duration;
- and
- e. injecting an inert gas into the cell during a fourth pulse of 1-10 seconds duration.
3 more elements
-24. (canceled)
A method for etching copper films on a substrate comprising:
- a. placing a substrate having a temperature in the range of 1200 C. to 3000 C. and comprising an upper surface, a lower surface, and silicon in a reaction cell, wherein at least one of said surfaces is coated with a copper layer.
- b. injecting an oxidizing agent into the cell through the use of a carrier gas during a first pulse of 1-20 seconds duration;
- c. injecting purge pulse comprising an inert gas into the cell during a second pulse of 1-10 seconds duration;
- d. injecting a reducing agent comprising hydrogen into the cell during a third pulse of 1-10 seconds duration;
- and
- e. injecting an inert gas selected from a group consisting of nitrogen, argon and helium into the cell during a fourth pulse of 1-10 seconds duration.
3 more elements
Dependencies are inferred from the claim text.