Shallow melt apparatus for semicontinuous czochralski crystal growth
AssigneeMidwest Research Institute
InventorsTihu Wang, Theodore F Ciszek
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AssigneeMidwest Research Institute
InventorsTihu Wang, Theodore F Ciszek
Estimating the term…
In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt crucible (20) to eliminate the necessity supplying a large quantity of feed stock materials that had to be preloaded in a deep crucible to grow a large ingot, comprising a gas tight container a crucible with a deepened periphery (25) to prevent snapping of a shallow melt and reduce turbulent melt convection; source supply means for adding source material to the semiconductor melt; a double barrier (23) to minimize heat transfer between the deepened periphery (25) and the shallow melt in the growth compartment; offset holes (24) in the double barrier (23) to increase melt travel length between the deepened periphery (25) and the shallow growth compartment; and the interface heater/heat sink (22) to control the interface shape and crystal growth rate.
In a single crystal pulling apparatus for providing a Czochralski crystal grows process, the improvement of a shallow melt crucible having melt connecting holes disposed outside of a growth compartment but inside of a feed compartment to eliminate the necessity of supplying a large quantity of feed stock materials that have to be preloaded in a deep crucible to grow a single ingot, comprising:
Dependencies are inferred from the claim text.