Low indium content quantum well structures
AssigneeSpectra-Physics, Inc.
InventorFrank Reinhardt
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Abstract
A method of suppression of Indium carry-over in the MOCVD growth of thin InGaAsP quantum wells, with low Indium content, on top of thick GaInAsP, with high Indium content. These quantum wells are essential in the stimulated emission of 808 to 880 nm phosphorous-based laser structures. The Indium carryover effect is larger in large multi wafer reactors and therefore is this invention focused on large multiwafer MOCVD reactors. This invention improves the quality of the quantum well, as measured by photo-luminescence spectra and uniformity of wavelength radiation.
Claims7
A method of simultaneously growing in a horizontal low pressure planetary MOCVD reactor a plurality of wafers having a gallium arsenide substrate for use in laser diodes, comprising the steps of:
- a) planetarily rotating each of said plurality of wafers while growing thereon a high Indium content wave guide foundation layer exhibiting a high indium vapor pressure;
- b) introducing into said reactor a short interval of trimethylgallium and phosphine to encapsulate residual indium deposited upstream of the wafer in a pseudomorphic layer of InGaP, utilizing residual indium remaining from the formation of said foundation layer;
- and
- c) growing a low Indium containing InxGa1-xAs1-yPy quantum well active region with precise Indium control, without disturbance by said residual Indium.
A semiconductor structure for a laser diode, comprising
- a GaAs substrate;
- an In0.48(AlαGa1-α)0.52InP wave guide;
- and
- an active region having the composition InxGa1-xAs1-yPy where x and y are small and adjusted to produce radiation at a specified wavelength and wherein x is lower than α.
Dependencies are inferred from the claim text.