Method of manufacturing a piezoelectric thin film resonator, manufacturing apparatus for a piezoelectric thin film resonator, piezoelectric thin film resonator, and electronic component

A method of manufacturing a piezoelectric thin film resonator that forms a resist layer so as to cover a substrate, forms a mask composed of the resist layer on the substrate by forming, in the resist layer, an exposure hole for exposing a formation part of a lower electrode on the substrate, forms an electrode material layer for forming the lower electrode on the substrate exposed via the exposure hole and on the mask, then forms the lower electrode by removing the electrode material layer on the mask by removing the mask, forms a piezoelectric film on the substrate so as to cover the lower electrode, and then forms an upper electrode on the piezoelectric film.

A method of manufacturing a piezoelectric thin film resonator that forms a resist layer so as to cover a substrate, forms a mask composed of the resist layer on the substrate by forming, in the resist layer, an exposure hole for exposing a formation part of a lower electrode on the substrate, forms an electrode material layer for forming the lower electrode on the substrate exposed via the exposure hole and on the mask, then forms the lower electrode by removing the electrode material layer on the mask by removing the mask, forms a piezoelectric film on the substrate so as to cover the lower electrode and then forms a resist layer so as to cover the piezoelectric film, forms a mask composed of the resist layer on the piezoelectric film by forming, in the resist layer on the piezoelectric film, an exposure hole for exposing a formation part of an upper electrode on the piezoelectric film, forms an electrode material layer for forming the upper electrode on the piezoelectric film exposed via the exposure hole and on the mask, and then forms the upper electrode by removing the electrode material layer on the mask by removing the mask.

A manufacturing apparatus for manufacturing a piezoelectric thin film resonator, constructed so as to be able to form a piezoelectric film on a substrate so as to cover a lower electrode formed on the substrate, to then form a resist layer so as to cover the piezoelectric film, to form a mask composed of the resist layer on the piezoelectric film by forming, in the resist layer, an exposure hole for exposing a formation part of an upper electrode on the piezoelectric film, to then form an electrode material layer for forming the upper electrode on the piezoelectric film exposed via the exposure hole and on the mask, and to then form the upper electrode by removing the electrode material layer on the mask by removing the mask.

A manufacturing apparatus for manufacturing a piezoelectric thin film resonator, constructed so as to be able to form a resist layer so as to cover a substrate, to form a mask composed of the resist layer on the substrate by forming, in the resist layer, an exposure hole for exposing a formation part of a lower electrode on the substrate, to form an electrode material layer for forming the lower electrode on the substrate exposed via the exposure hole and on the mask, to then form the lower electrode by removing the electrode material layer on the mask by removing the mask, to form a piezoelectric film on the substrate so as to cover the lower electrode, and to then form an upper electrode on the piezoelectric film.

A manufacturing apparatus for manufacturing a piezoelectric thin film resonator, constructed so as to be able to form a resist layer so as to cover a substrate, to form a mask composed of the resist layer on the substrate by forming, in the resist layer, an exposure hole for exposing a formation part of a lower electrode on the substrate, to form an electrode material layer for forming the lower electrode on the substrate exposed via the exposure hole and on the mask, to then form the lower electrode by removing the electrode material layer on the mask by removing the mask, to form a piezoelectric film on the substrate so as to cover the lower electrode, to then form a resist layer so as to cover the piezoelectric film, to form a mask composed of the resist layer on the piezoelectric film by forming, in the resist layer on the piezoelectric film, an exposure hole for exposing a formation part of an upper electrode on the piezoelectric film, to then form an electrode material layer for forming the upper electrode on the piezoelectric film exposed via the exposure hole and on the mask, and to then form the upper electrode by removing the electrode material layer on the mask by removing the mask.