Aqueous cleaning composition containing copper-specific corrosion inhibitor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Li Chou, Hun-Jan Tao, Peng-Fu Hsu
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Abstract
A composition and method for fabricating a semiconductor wafer containing copper is disclosed, which method includes plasma etching a dielectric layer from the surface of the wafer, plasma ashing a resist from the surface of the wafer, and cleaning the wafer surface by contacting same with a cleaning formulation, which includes the following components and their percentage by weight ranges shown: (a) from about 0.01 to 80% by weight organic solvent, (b) from about 0.01 to 30% by weight copper chelating agent, (c) from about 0.01 to 10% by weight copper inhibitor, and (d) from about 0.01 to 70% by weight water.
Claims8
A semiconductor wafer cleaning formulation, comprising the following components in the percentage by weight ranges shown, based on the total weight of such components:
- (a) from about 0.01 to 80% copper solvent;
- (b) from about 0.01 to 30% copper chelating agent;
- (c) from about 0.01 to 10% copper inhibitor;
- and
- (d) from about 0.01 to 70% water.
A method for fabricating a semiconductor wafer containing copper, comprising:
- plasma etching a dielectric layer from the surface of the wafer;
- plasma ashing a resist from the surface of the wafer;
- cleaning the wafer surface by contacting same with a cleaning formulation, comprising the following components in the percentage by weight ranges shown, based on the total weight of such components:
- (a) from about 0.01 to 80% copper solvent;
- (b) from about 0.01 to 30% copper chelating agent;
- (c) from about 0.01 to 10% copper inhibitor;
- and
- (d) from about 0.01 to 70% water.
Dependencies are inferred from the claim text.