Ultrathin oxide films on semiconductors

A method of making a semiconductor structure, comprising:

• obtaining a liquid comprising analytically pure Zr4(OPrn)16;
• contacting a surface of a semiconductor with the liquid in an inert atmosphere to form a modified surface;
• rinsing the modified surface;
• hydrolyzing the modified surface with an aqueous liquid comprising n-propanol to form an activated surface;
• drying the activated surface;
• repeating the contacting, rinsing, hydrolyzing, and drying to form a layer of zirconia on the semiconductor surface;
• and
• heat treating the semiconductor comprising the layer of zirconia.

A semiconductor structure comprising:

• a semiconductor substrate;
• and
• a layer comprising zirconia on the substrate;
• the layer having an equivalent oxide thickness of not more than 2 nanometers;
• wherein the semiconductor structure has a leakage current less than 0.002 A/cm2 when subjected to a potential of 1 volt.

A metal oxide semiconductor capacitor comprising:

• a semiconductor substrate comprising a first surface and a second surface;
• a layer comprising zirconia on the first surface;
• a first layer of a conductor on at least a portion of the zirconia layer;
• and
• a second layer of a conductor on at least a portion of the second surface;
• wherein the capacitor has a leakage current less than 0.002 A/cm2 when subjected to a potential of 1 volt in accumulation.