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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Hsien Lin, Henry Lo, Anthony Liu, Yu-Liang Lin
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A method and apparatus for curing and-modifying a-low k dielectric layer in an interconnect structure is disclosed. A spin-on low k dielectric layer comprised of an organic silsesquioxane, polyarylether, bisbenzocyclobuene, or SiLK is spin coated on a substrate. The substrate is placed in a process chamber in a supercritical CO2 system and is treated at a temperature between 30° C. and 150° C. and at a pressure from 70 to 700 atmospheres. A co-solvent such as CF3—X or F—X is added that selectively replaces C—CH3 bonds with C—CF3 or C—F bonds. Alternatively, H2O2 is employed as co-solvent to replace a halogen in a C-Z bond where Z=F, Cl, or Br with an hydroxyl group. Two co-solvents may be combined with CO2 for more flexibility. The cured dielectric layer has improved properties that include better adhesion, lower k value, increased hardness, and a higher elastic modulus.
A method of curing and modifying a low k dielectric layer on a substrate, comprising:
A damascene process comprising the steps of:
An apparatus for curing and modifying a low k dielectric material on a substrate, comprising a continuous loop SCF system that can withstand pressures from about 70 to 700 atmospheres and temperatures of about 30° C. to 150° C., comprising:
Dependencies are inferred from the claim text.