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AssigneeSemco Engineering SA
InventorYvon Pellegrin
Estimating the term…
Method and device for doping or diffusion, or oxidation of silicon wafers (4), the wafers being introduced into the chamber (2) of an oven (1) wherein is introduced at least a gas for performing the doping or diffusion or oxidation process. The method comprises simultaneously with the introduction and passage of gas into the chamber (2) of the oven (1), continuously subjecting the latter to a depression of constant value. The device comprises an oven (1) provided with a chamber (2) wherein are introduced the wafers, the oven including at least an inlet tube (5a, 5b, 5c) for introducing at least a gas into the chamber (2) to carry out the processes and at least an outlet tube (6) for extracting the gas whereto is connected a suction unit (7) for generating in the chamber (2) a constant and controlled depression.
Process for doping or diffusion or oxidation of silicon wafers (4), said wafers being introduced into the chamber (2) of an oven (1) into which is introduced at least one gas to accomplish the operation of doping or diffusion or oxidation, characterized in that it consists simultaneously to the introduction and to the passage of the gas into the chamber (2) of the oven (1), in subjecting this latter, continuously, to an under pressure of constant value.
Device for doping, diffusion or oxidation of silicon wafers (4), comprising an oven (1) provided with a chamber (2) hermetically sealed by a door (2b), into which chamber are introduced said wafers, said oven comprising at least one inlet tube (5a, 5b, 5c) for at least one gas into the chamber (2) to perform the mentioned operations, characterized in that it moreover comprises at least one tube (6) for removal of the gas, and a suction unit (7) connected to said gas extraction tube (6) adapted to create in the chamber (2) a constant and controlled under pressure.
Dependencies are inferred from the claim text.