Method to improve profile control and n/p loading in dual doped gate applications
AssigneeLam Research Corporation
InventorsHelene Del Puppo, Frank Lin, Chris Lee, Vahid Vahedi, Thomas A. Kamp, Alan J. Miller
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Abstract
A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.
Claims28
A method for etching a polysilicon gate structure in a plasma etch chamber, comprising:
- defining a pattern protecting a polysilicon film to be etched;
- striking a plasma;
- etching substantially all of the polysilicon film that is unprotected;
- introducing a silicon containing gas;
- and
- etching a remainder of the polysilicon film while introducing a silicon containing gas.
A method for decreasing etch rate micro-loading between differently doped material of a substrate, comprising:
- striking a plasma in a chamber;
- etching the substrate;
- forming a passivation layer from byproducts generated from the etching;
- and
- enhancing the passivation layer.
A semiconductor processing system, comprising:
- a chamber, the chamber including,
- a gas inlet;
- a top electrode configured to strike a plasma inside the chamber;
- and
- a support for holding a substrate;
- a controller configured to detect a passivation starved condition during an etching operation, wherein in response to the passivation starved condition, the controller is further configured to introduce a passivation enhancing gas through the gas inlet during the etching operation.
A method for enhancing a polysilicon to oxide selectivity during an etching process, comprising:
- providing a substrate to be plasma etched in a chamber;
- striking a plasma in the chamber;
- and
- depositing a thin layer of a silicon containing oxide over a gate oxide as the substrate is being etched.
Dependencies are inferred from the claim text.