Anisotropic etching of organic-containing insulating layers
AssigneeInteruniversitair Microelektronica Centrum (IMEC)
InventorsSerge Vanhaelemeersch, Mikhail Rodionovich Baklanov
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Abstract
A method for forming an opening in an organic insulating layer by covering the insulating layer with a bilayer containing a resist hard mask layer and a resist layer on top of the resist hard mask layer. The bilayer is patterned, and an opening is created by plasma etching the insulating layer in a reaction chamber containing a gas mixture. The plasma etching is controlled so that virtually no etch residues are deposited and so that the side walls of the opening are fluorinated to enhance the anisotropy of the etching. The gas mixture can be a mixture of a fluorine-containing gas and an inert gas, a mixture of an oxygen-containing gas and an inert gas, or a mixture of hydrogen bromide and an additive.
Claims8
A method for forming at least one opening in an organic-containing insulating layer, comprising:
- covering the organic-containing insulating layer with a bilayer comprising a resist hard mask layer and a resist layer, wherein the resist hard mask layer is formed on the organic-containing insulating layer, and wherein the resist layer is formed on the resist hard mask layer;
- patterning the bilayer, whereby a patterned bilayer is obtained;
- and
- plasma etching the organic-containing insulating layer in a reaction chamber containing a gaseous mixture, whereby an opening is created in the organic-containing insulating layer, wherein the gaseous mixture comprises a fluorine-containing gas and an inert gas, wherein the gaseous mixture contains essentially no oxygen-containing gas, wherein substantially no etch residue is deposited while creating the opening, and wherein the side walls of the opening are fluorinated such that anisotropy of the plasma etching is increased.
Dependencies are inferred from the claim text.