Composition and method used for chemical mechanical planarization of metals
OwnerSong Y. Chang, Mark Evans +2inventors
InventorsSong Y. Chang, Mark Evans, Dnyanesh Tamboli, Stephen W. Hymes
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Abstract
Compositions for use in CMP processing and methods of CMP processing. The composition utilizes low levels of particulate material, in combination with at least one amino acid, at least one oxidizer, and water to remove a metal layer such as one containing copper to a stop layer with high selectivity.
Claims53
A composition for use in removing copper from the surface of a wafer containing copper above a stop layer comprising:
- an oxidizing agent;
- an amino acid;
- about 5 ppm to less than 1000 ppm particulate material by weight;
- and
- water, wherein the composition facilitates removal of copper from the wafer surface while maintaining a rate of removal of copper to stop layer of at least 50:1.
A method of removing copper from the surface of a wafer containing copper above a stop layer, comprising:
- contacting a wafer surface with a polishing pad at an interface between the wafer surface and the polishing pad;
- supplying a solution to the interface, the solution comprising at least one oxidizing agent, at least one amino acid, at least one particulate material, and water, wherein the particulate material has a concentration sufficient to remove copper while maintaining a rate of removal of copper to stop layer of at least 50:1;
- and
- initiating relative motion between the polishing pad and the wafer surface.
A method of removing copper from the surface of a wafer containing copper above a stop layer, comprising:
- contacting a wafer surface with a polishing pad at an interface;
- adding water to a solution, the solution comprising at least one amino acid, at least one particulate material, and water, the combination of water and solution forming a diluted solution;
- supplying the diluted solution to the interface, wherein the particulate material in the diluted solution has a concentration sufficient to remove copper while maintaining a rate of removal of copper to stop layer of at least 50:1;
- and
- initiating relative motion of the polishing pad and the wafer surface.
A composition for use in removing copper from the surface of a wafer containing copper above a stop layer consisting essentially of:
- an oxidizing agent;
- an amino acid;
- about 5 ppm to about 4000 ppm particulate material by weight;
- and
- water, wherein the composition facilitates removal of copper from the wafer surface while maintaining a rate of removal of copper to stop layer of at least 50:1.
Dependencies are inferred from the claim text.