Method for metalizing wafers
OwnerJohn Grunwaldinventor
Life of this patent
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Abstract
A method of depositing metal on the surface of a silicon wafer. The method comprises (i) contacting the silicon wafer with a solution comprising non-precious metal ions, and (ii) thereafter contacting the silicon wafer with a solution comprising a reducing agent. The silicon wafer is preferably contacted with the foregoing solution by creating a puddle of the solution on the surface of the wafer.
Claims21
A method of electrolessly depositing a metal on at least a part of the surface of a silicon wafer substrate, comprising:
- (a) contacting the silicon wafer substrate with a solution comprising non-precious metal ions so as to obtain a wafer substrate covered with non-precious metal ions;
- and
- (b) exposing the wafer substrate obtained in step (a) to a reducing solution comprising a reducing agent for reducing the metal ions that cover said substrate to a lower oxidation state.
A method for forming a copper pattern on a silicon wafer substrate comprising (a) contacting the silicon wafer substrate with a solution comprising non-precious metal ions so as to obtain a wafer substrate covered with non-precious metal ions;
- (b) exposing the wafer substrate obtained in step (a) to a reducing solution comprising a reducing agent for reducing the metal ions that cover said substrate to a lower oxidation state;
- and (c) contacting the wafer substrate obtained in step (b) with an electroless copper plating solution.
A method of repairing dishing defects of copper on a ULSI device, comprising contacting at least said defected area of said device with electroless copper solution.
Dependencies are inferred from the claim text.