Method of forming wiring structure
AssigneeSanyo Electric Co., Ltd.
InventorsYoshinori Shishida, Hiroyuki Watanabe
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Abstract
A method of forming a wiring structure capable of inhibiting a photoresist film for forming an opening from a pattern failure resulting from nitrogen compound gas is obtained. This method of forming a wiring structure comprises steps of forming a first insulator film and a gas permeation suppressive film for suppressing permeation of gas containing nitrogen on a first wiring layer, forming a first opening through the first insulator film and the gas permeation suppressive film, performing at least either heat treatment or retention under a vacuum after forming the first opening, and thereafter forming a second opening through at least the first insulator film.
Claims20
A method of forming a wiring structure, comprising steps of:
- forming a first wiring layer;
- forming a first insulator film on said first wiring layer;
- forming a gas permeation suppressive film for suppressing permeation of gas containing nitrogen on said first wiring layer;
- forming a first opening through said first insulator film and said gas permeation suppressive film;
- performing at least either heat treatment or retention under a vacuum after forming said first opening;
- and
- thereafter forming a second opening through at least said first insulator film.
A method of forming a wiring structure, comprising steps of:
- forming a first wiring layer;
- forming a first insulator film on said first wiring layer;
- forming a gas permeation suppressive film for suppressing permeation of gas containing nitrogen on said first wiring layer;
- forming a first opening through said first insulator film and said gas permeation suppressive film;
- performing heat treatment after forming said first opening;
- and
- thereafter forming a second opening at least through said first insulator film.
Dependencies are inferred from the claim text.