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US 2004/0175928 A1Published application
Barrier film integrity on porous low k dielectrics by application of a hydrocarbon plasma treatment
AssigneeIntel Corporation
InventorThomas Joseph Abell
Life of this patent
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Abstract
A method for treating a dielectric material using hydrocarbon plasma is described, which allows for thinner films of barrier material to be used to form a robust barrier.
Claims26
A method of fabricating an interconnect structure in an integrated circuit comprising:
- forming an etch stop/diffusion barrier over an underlying layer;
- depositing an interlayer dielectric on the etch stop/diffusion barrier;
- etching vias and trenches in the interlayer dielectric;
- treating the surface of the interlayer dielectric with plasma, so as to deposit a coating of carbon-rich polymeric material;
- depositing a barrier layer over the surface of the treated interlayer dielectric, so as to line the vias and the trenches;
- forming a copper alloy over the barrier layer, so as to fill the vias and the trenches;
- and
- planarizing the copper alloy.
5 more elements
A method of treating porous dielectric materials comprising:
- treating the surface of a porous dielectric material with hydrocarbon plasma, so as to deposit a carbon-rich polymer material on the surface of the porous dielectric material;
- and
- depositing a barrier material over the carbon-rich polymer material, so as to line the vias and the trenches.
An interconnect structure comprising:
- vias and trenches defined by an interlayer dielectric disposed above an underlying layer;
- a carbon rich polymer layer is disposed on the surface of the interlayer dielectric, so as to line the vias and the trenches;
- a barrier layer disposed over the carbide layer;
- and
- a copper alloy over the barrier layer, filling the vias and the trenches.
2 more elements
Dependencies are inferred from the claim text.