Semiconductor device fabrication method
AssigneeOki Electric Industry Co., Ltd.
InventorsYoshinori Shizuno, Takashi Ohsumi
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Abstract
In one embodiment of the invention, a plurality of posts (terminals) stands on a main surface of a semiconductor substrate. A first metal electrode is formed on a side face of each post before providing a sealing layer over the main surface of the semiconductor substrate. The first metal electrode constitutes a portion of an external terminal. After providing the sealing layer, a second metal electrode is formed on each post and the associated first metal electrode. Then, an “alloy” of the first and second metal electrodes is formed by heating these electrodes. Accordingly, the external terminal can be formed on the top face and side face of each post without carrying out a step of removing the sealing layer by means of a laser.
Claims26
A semiconductor device fabrication method, comprising the steps of:
- A) preparing a semiconductor substrate having a plurality of terminals formed on a main surface of the semiconductor substrate;
- B) forming a first metal electrode on a side face of each said terminal;
- C) forming a sealing layer on the main surface of the semiconductor substrate so as to cover the terminals and the first metal electrodes;
- D) exposing a top face of each said terminal and a top face of each said first metal electrode by polishing a surface of the sealing layer;
- E) forming a second metal electrode on the exposed top face of each said terminal and on the exposed top face of each said first metal electrode;
- and
- F) producing an alloy of each said first metal electrode and associated said second metal electrode by heating the first and second metal electrodes.
A semiconductor device fabrication method comprising the steps of:
- A) preparing a semiconductor substrate having a plurality of terminals formed on a main surface of the semiconductor substrate;
- B) covering a side face of each said terminal with a dummy layer;
- C) forming a sealing layer on the main surface of the semiconductor substrate so as to cover the terminals and the dummy layers;
- D) exposing a top face of each said terminal and a top face of each said dummy layer by polishing a surface of the sealing layer;
- E) exposing the side face of each said terminal by removing the dummy layer;
- and
- F) forming a conductor on the exposed surface of each said terminal.
Dependencies are inferred from the claim text.