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US 2004/0175912 A1Published application
Method for manufacturing group-III nitride compound semiconductor device
AssigneeToyoda Gosei Co., Ltd.
InventorToshiya Uemura
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Abstract
After a p-seat electrode-forming layer is laminated onto a light-transmissive electrode-forming layer, a first heating step and a second heating step are carried out for alloying the two layers. In the first heating step, heat treatment is performed at a relatively low temperature in an atmosphere containing oxygen. In the second heating step, heat treatment is performed at a relatively high temperature in an atmosphere not containing oxygen.
Claims8
A method for producing a Group III nitride compound semiconductor device, comprising:
- an electrode forming step of forming a first electrode layer by laminating a first metal on a p-type layer of a Group III nitride compound semiconductor and forming a second electrode layer by laminating a second metal having higher ionization potential than said first metal on said first electrode layer;
- a first heating step of performing heat treatment at a first temperature in an atmosphere substantially containing oxygen;
- and
- a second heating step of performing heat treatment at a second temperature higher than said first temperature in an atmosphere substantially not containing oxygen.
1 more element
Dependencies are inferred from the claim text.