Method for forming an optical silicon layer on a support and use of said method in the production of optical components
AssigneeCommissariat a l'Energie Atomique
InventorsEmmanuel Hadji, Jean-Louis Pautrat
Life of this patent
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Abstract
The invention relates to a process for the formation of a silicon layer (22a) with a determined thickness on a support (10), for optical purposes. The process comprises the following steps: a) molecular bonding of a silicon block (20a) on the support, the silicon block having a surface layer (22a) delimited by a cleavage area, b) cleavage of the silicon block along the cleavage area to detach the surface layer from it, c) adjustment of the thickness of the said surface layer. Applications to the manufacture of optical components.
Claims15
Process for the formation of a silicon layer (22a, 22b, 32, 34) for optical purposes with a determined (optical) thickness, on a support (10), characterized in that it comprises the following steps:
- a) Molecular bonding of a silicon block (20a, 20b) on the support on which there may or may not already be other layers, the silicon block having a surface layer (22a, 22b, 32, 34) delimited by a cleavage area (21) substantially parallel to its surface, and with a thickness greater than or respectively less than the said determined thickness, and the silicon block being covered by a silicon oxide layer (12a, 12b) brought into contact with the support during bonding,
- b) cleavage of the silicon block along the cleavage area to detach the surface layer fixed to the support from it,
- c) thinning or respectively thickening the said surface layer until a thickness substantially equal to the said determined thickness, is obtained.
Dependencies are inferred from the claim text.