Apparatuses and methods for forming a substantially facet-free epitaxial film

A method of forming an integrated circuit comprising:

• forming a transistor over a substrate having a gate electrode overlying a gate oxide, wherein said transistor is electrically isolated by a plurality of field oxide regions;
• forming a source and a drain regions in said substrate adjacent to said gate electrode;
• forming oxide spacers adjacent to said gate electrode;
• introducing an epitaxial film forming process gas and a carrier gas over said substrate, said epitaxial film forming process gas and said carrier have a flow ratio between 1:1 and 1:200;
• and
• depositing said epitaxial film over regions of said substrate that are not covered by said gate electrode and said oxide spacers wherein said substrate has a temperature between about 350° C. and about 900° C. when said epitaxial film is being deposited.

A processing system comprising:

• a single wafer deposition chamber having a susceptor to hold a substrate during a deposition process;
• a controller for controlling said single wafer deposition chamber;
• a machine-readable medium coupling to said controller, said machine-readable medium has a memory that stores a set of instructions that controls operations of said deposition process;
• and
• wherein said set of instructions further controls selective deposition of an epitaxial film on a region of said substrate, wherein said set of instructions maintains temperature at said substrate to be between 350° C. and 900° C. and introduces an epitaxial film forming process gas and a carrier gas into said single wafer deposition chamber to deposit an epitaxial film into said region, and wherein said instructions maintains a flow ratio for said epitaxial film forming process gas and said carrier gas to be between 1:1 to 1:200.

A processing system comprising:

• a single wafer deposition chamber having a susceptor to hold a first substrate during a deposition process;
• a controller for controlling said single wafer deposition chamber;
• a machine-readable medium coupling to said controller, said machine-readable medium has a memory that stores a set of instructions that controls operations of said deposition process;
• and
• wherein said set of instructions further controls selective deposition of an epitaxial film on a region of said substrate wherein said instructions maintains temperature at said substrate to be between 350° C. and 900° C. and introduces an epitaxial film forming process gas and a carrier gas into said single wafer deposition chamber to deposit an epitaxial film into said region, wherein said instructions maintains a flow ratio for said epitaxial film forming process gas and said carrier gas to be between 1:1 to 1:200.