Atomic layer deposited dielectric layers
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
Life of this patent
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Abstract
An atomic layer deposited dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Depositing a hafnium metal layer on a substrate surface by atomic layer deposition and depositing a hafnium oxide layer on the hafnium metal layer by atomic layer deposition form a hafnium oxide dielectric layer substantially free of silicon oxide. Dielectric layers containing atomic layer deposited hafnium oxide are thermodynamically stable such that the hafnium oxide will have minimal reactions with a silicon substrate or other structures during processing.
Claims73
A method of forming a dielectric layer comprising:
- forming a layer of a metal on a substrate by atomic layer deposition;
- and
- forming on the metal, by atomic layer deposition, an oxide of the metal.
A method of forming a dielectric layer comprising:
- forming a layer of hafnium on a substrate by atomic layer deposition;
- and
- forming a layer of hafnium oxide on the layer of hafnium by atomic layer deposition.
A method of forming a capacitor, comprising:
- forming a first conductive layer on a substrate;
- forming a layer of a metal on the first conductive layer by atomic layer deposition;
- forming a layer of an oxide of the metal on the layer of metal by atomic layer deposition;
- and
- forming a second conductive layer on the layer of the oxide of the metal layer.
A method of forming a transistor comprising:
- forming a source region and a drain region in a substrate, the source region and the drain region separated by a body region;
- forming a dielectric layer on the body region between the source and drain regions by atomic layer deposition;
- and
- coupling a gate to the dielectric layer, wherein forming the dielectric layer includes:
- forming a layer of a metal on the body region by atomic layer deposition;
- and
- forming a layer of an oxide of the metal on the layer of metal by atomic layer deposition.
A method of forming a memory comprising:
- forming a number of access transistors, forming at least one of the access transistors including forming a dielectric layer on a body region between a source region and a drain region;
- forming a number of word lines coupled to the number of access transistors;
- forming a number of bit lines coupled to the number of access transistors, wherein forming the dielectric layer includes:
- forming a layer of a metal on the body region by atomic layer deposition;
- and
- forming a layer of an oxide of the metal on the layer of metal by atomic layer deposition.
A method of forming an electronic system comprising:
- providing a processor;
- coupling a memory to the processor, wherein the memory is formed by a method including:
- forming a number of access transistors, forming at least one of the access transistors including forming a dielectric layer on a body region between a source region and a drain region;
- forming a number of word lines coupled to number of access transistors;
- forming a number of bit lines coupled to the number of access transistors, wherein forming the dielectric layer includes:
- forming a layer of metal on the body region by atomic layer deposition;
- and
- forming a layer of an oxide of the metal on the layer of metal by atomic layer deposition.
A computer-readable medium having computer-executable instructions for performing a method of forming an electronic apparatus having a dielectric layer, the method comprising:
- forming a layer of a metal on a substrate by atomic layer deposition;
- and
- forming a layer of an oxide of the metal on the metal layer by atomic layer deposition.
A capacitor, comprising:
- a first conductive layer;
- a dielectric layer disposed on the first conductive layer;
- and
- a second conductive layer disposed on the dielectric layer;
- the dielectric layer formed by a method including:
- forming a layer of metal on the first conductive layer by atomic layer deposition;
- and
- forming a layer of an oxide of the metal on the metal layer by atomic layer deposition.
A transistor comprising:
- a body region between a source region and a drain region;
- a dielectric layer disposed on the body region between the source region and the drain region;
- and
- a gate coupled to the dielectric layer;
- the dielectric layer formed by a method including:
- forming a layer of a metal on the body region by atomic layer deposition;
- and
- forming a layer of an oxide of the metal on the layer of the metal by atomic layer deposition.
A memory comprising:
- a number of access transistors, at least one access transistor including a gate coupled to a dielectric layer, the dielectric layer disposed on a body region between a source region and a drain region;
- a number of word lines coupled to the number of access transistors;
- and
- a number of bit lines coupled to the number of access transistors;
- the dielectric layer formed by a method including:
- forming a metal layer on the body region by atomic layer deposition;
- and
- forming a layer of an oxide of the metal on the metal layer by atomic layer deposition.
An electronic system comprising:
- a processor;
- a system bus;
- and
- a memory coupled to the processor by the system bus, the memory including:
- a number of access transistors, at least one access transistor including a gate coupled to a dielectric layer, the dielectric layer disposed on a body region between a source region and a drain region;
- a number of word lines coupled to the number of access transistors;
- and
- a number of bit lines coupled to the number of access transistors;
- the dielectric layer formed by a method including:
- forming a metal layer on the body region by atomic layer deposition;
- and
- forming a layer of an oxide of the metal on the metal layer by atomic layer deposition.
Dependencies are inferred from the claim text.