Manufacturing method of a semiconductor thin film using a solid laser beam
AssigneesCasio Computer Co., Ltd., Sumitomo Heavy Industries, Ltd.
InventorsHiroshi Matsumoto, Shigeru Morikawa, Toshio Kudo
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Abstract
A manufacturing method of a semiconductor thin film, comprising preparing a substrate, forming a semiconductor thin film on the substrate; and irradiating laser beam to the semiconductor thin film, wherein the semiconductor thin film is formed at a thickness so that an absorption rate to the laser beam is equal to or higher than 80% of a peak value, by using light interference that occurs in the interior of the semiconductor thin film, and the semiconductor thin film is crystallized or re-crystallized by irradiating the laser beam, is provided.
Claims16
A manufacturing method of a semiconductor thin film, comprising:
- preparing a substrate;
- forming a semiconductor thin film on said substrate;
- and
- irradiating laser beam to said semiconductor thin film;
- wherein
- said semiconductor thin film is formed at a thickness so that an absorption rate to the laser beam is equal to or higher than 80% of a peak value, by light interference that occurs in the interior of the semiconductor thin film, and is crystallized or re-crystallized by irradiating the laser beam.
Dependencies are inferred from the claim text.