Semiconductor device and method of forming the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Yasuhiko Takemura, Hongyong Zhang
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Abstract
An insulated gate semiconductor device comprising an insulator substrate having provided thereon a source and a drain region; a channel region being incorporated between said source and said drain regions, said channel region comprising a polycrystalline, a single crystal, or a semi-amorphous semiconductor material; and a region provided under said channel region, said region comprising an amorphous material containing the same material as that of the channel region as the principal component, or said region comprising a material having a band gap larger than said channel region. A process for fabricating the device is also disclosed.
Claims15
A semiconductor device comprising:
- a first insulating film comprising silicon nitride formed over a substrate;
- a second insulating film comprising silicon oxide formed over the first insulating film;
- and
- a thin film transistor formed over the second insulating film,
- wherein the thin film transistor comprises a channel region and source and drain regions,
- wherein a thickness of the channel region is smaller than that of the source and drain regions.
A semiconductor device comprising:
- a first insulating film comprising silicon nitride formed over a substrate;
- a second insulating film comprising silicon oxide formed over the first insulating film;
- and
- a thin film transistor formed over the second insulating film,
- wherein a thickness of the first insulating is smaller than that of the second insulating film,
- wherein the thin film transistor comprises a channel region and source and drain regions,
- wherein a thickness of the channel region is smaller than that of the source and drain regions.
A semiconductor device comprising:
- a first insulating film comprising silicon nitride formed over a substrate;
- a second insulating film comprising silicon oxide formed over the first insulating film;
- and
- a thin film transistor formed over the second insulating film,
- wherein the thin film transistor comprises a channel region and source and drain regions,
- wherein the thin film transistor further comprises an amorphous semiconductor film formed below the channel region.
A semiconductor device comprising:
- a first insulating film comprising silicon nitride formed over a substrate;
- a second insulating film comprising silicon oxide formed over the first insulating film;
- and
- a thin film transistor formed over the second insulating film,
- wherein the thin film transistor comprises a channel region and source and drain regions,
- wherein the thin film transistor further comprises an amorphous semiconductor film formed below the channel region,
- wherein a thickness of the channel region is smaller than that of the source and drain regions.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a first insulating film comprising silicon nitride over a substrate;
- forming a second insulating film comprising silicon oxide over the first insulating film;
- forming a first semiconductor film over the second insulating film;
- forming a second semiconductor film over the semiconductor film;
- and
- forming a channel region at least in the first semiconductor film.
Dependencies are inferred from the claim text.