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US 2004/0175868 A1Published application
Manufacturing method of cmos thin film transistor
AssigneeToppoly Optoelectronics Corp.
InventorPing Luo
Life of this patent
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Abstract
A method of forming a CMOS TFT device. The present method features that the n+-ion doping procedure is performed after defining the contact holes located in the doped areas. Thus, the source/drain region of the NMOS can be formed. The present invention requires only five photomasks, thereby reducing the number of photomasks consumed in the prior art.
Claims16
A method of forming a TFT device, comprising the steps of:
- providing a substrate;
- performing a first patterning procedure with a first photomask to form a first semiconductor island and a second semiconductor island on part of the substrate;
- performing a second patterning procedure with a second photomask to expose the first semiconductor island and/or the second semiconductor island;
- doping impurities into the exposed first semiconductor island and/or the exposed second semiconductor island to adjust threshold voltage;
- forming an insulating layer on the first semiconductor island, the second semiconductor island and the substrate;
- forming a conductive layer on the insulating layer;
- performing a third patterning procedure with a third photomask to remove part of the conductive layer and define a first gate and a second gate;
- using the first gate and the second gate as a mask, performing an n−-ion doping procedure to form an LDD region in the first semiconductor island;
- performing a fourth patterning procedure with a fourth photomask to expose the second gate;
- using the second gate as a mask, performing a p+-ion doping procedure to form a second source/drain region in the second semiconductor island;
- forming a passivation layer on the insulating layer, the first gate, and the second gate;
- performing a fifth patterning procedure with a fifth photomask to form a plurality of contact holes penetrating the passivation layer and the insulating layer;
- and
- by means of the contact holes, performing an n+-ion doping procedure to form a first source/drain region in the first semiconductor island;
- wherein an ion dosage of the p+-ion doping procedure is greater than an ion dosage of the n+ ions doping procedure.
12 more elements
A method of forming a CMOS TFT device with five photomasks, comprising steps of:
- providing a substrate;
- performing a first patterning procedure with a first photomask to form a first semiconductor island and a second semiconductor island on part of the substrate;
- performing a second patterning procedure with a second photomask to expose part of the first semiconductor island and/or the second semiconductor island;
- doping impurities into the exposed first semiconductor island and/or the exposed second semiconductor island to adjust threshold voltage;
- forming a gate insulating layer on the first semiconductor island, the second semiconductor island and the substrate;
- forming a conductive layer on the gate insulating layer;
- performing a third patterning procedure with a third photomask to remove part of the conductive layer and define a first gate and a second gate, wherein the first gate is located above the first semiconductor island and the second gate is located above the second semiconductor island;
- using the first gate and the second gate as a mask, performing an n−-ion doping procedure to form an LDD region in the first semiconductor island;
- performing a fourth patterning procedure with a fourth photomask to expose the second gate;
- using the second gate as a mask, performing a p+-ion doping procedure to form a second source/drain region in the second semiconductor island;
- forming a passivation layer on the insulating layer, the first gate, and the second gate;
- performing a fifth patterning procedure with a fifth photomask, and forming a plurality of contact holes penetrating the passivation layer and the insulating layer, wherein the contact holes are located above the first semiconductor island and the second semiconductor island;
- and
- by means of the contact holes, performing an n+-ion doping procedure to form a first source/drain region in the first semiconductor island;
- wherein an ion dosage of the p+-ion doping procedure is ten times than that of the n+-ion doping procedure.
12 more elements
Dependencies are inferred from the claim text.