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US 2004/0175857 A1Published application
Method for making programmable resistance memory element
AssigneeOvonyx, Inc.
InventorsTyler Lowrey, Patrick Klersy, Stephen J. Hudgens, Jon Maimon
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Abstract
A method of making an electrically operated programmable resistance memory element. A sidewall spacer is used as a mask to form a raised portion of a conductive layer. A programmable resistance material is formed in electrical contact with the raised portion.
Claims18
A method for making a programmable resistance memory element, comprising:
- providing a conductive material;
- forming a sidewall spacer over said conductive material;
- using said sidewall spacer as a mask, removing a portion of said conductive material to form a raised portion of said conductive material under said spacer;
- and
- forming a programmable resistance material in electrical contact with said raised portion.
2 more elements
Dependencies are inferred from the claim text.