Semiconductor device and method for fabricating the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsKaoru Inoue, Yoshito Ikeda, Yutaka Hirose, Katsunori Nishii
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Abstract
A semiconductor device has an active region composed of a group III-V nitride semiconductor and ohmic electrodes and a gate electrode each formed on the active region. The active region has an entire surface thereof exposed to a plasma such that a surface potential for electrons therein is lower than in the case where the entire surface is not exposed to the plasma.
Claims11
A method for fabricating a semiconductor device, the method comprising the steps of:
- (a) exposing a surface of an active region composed of a group III-V nitride semiconductor to a plasma to reduce a surface potential for an electron in the active region;
- and
- (b) selectively forming an ohmic electrode and a gate electrode on the active region with the reduced surface potential.
A method for fabricating a semiconductor device, the method comprising the steps of:
- (a) selectively forming an ohmic electrode and a gate electrode on an active region composed of a group III-V nitride semiconductor;
- and
- (b) exposing the active region to a plasma by using the ohmic electrode and the gate electrode as a mask to reduce a surface potential for an electron in an exposed region of the active region.
A semiconductor device comprising:
- an active region composed of a group III-V nitride semiconductor;
- and
- a gate electrode formed on the active region and source and drain electrodes each formed in spaced apart relation to the gate electrode,
- a portion of the active region interposed between the gate electrode and the source electrode having a surface thereof exposed selectively to a plasma such that a surface potential for an electron is lower therein than in the other portion of the active region.
A semiconductor device comprising:
- an active region composed of a group III-V nitride semiconductor;
- and
- an ohmic electrode and a gate electrode each formed on the active region,
- the active region having an entire surface thereof exposed to a plasma such that a surface potential for an electron therein is lower than in the case where the entire surface is not exposed to the plasma.
A semiconductor device comprising:
- a plurality of field effect transistors each having an active region composed of a group III-V nitride semiconductor,
- at least one of the plurality of the field effect transistors having a surface of the active region thereof being exposed selectively to a plasma such that a surface potential for an electron is lower therein than in the respective active regions of the other field effect transistors unexposed to the plasma.
Dependencies are inferred from the claim text.