Modulated/composited CVD low-k films with improved mechanical and electrical properties for nanoelectronic devices
AssigneeApplied Materials, Inc.
InventorsSon Van Nguyen, Yi Zheng
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Abstract
A method for depositing a low dielectric constant film is provided. The low dielectric constant film includes alternating sublayers, which include at least one carbon-doped silicon oxide sublayer. The sublayers are deposited by a plasma process than includes pulses of RF power. The alternating sublayers are deposited from two or more compounds that include at least one organosilicon compound. The two or more compounds and processing conditions are selected such that adjacent sublayers have different and improved mechanical properties.
Claims41
A method of depositing a low k dielectric film on a substrate, comprising:
- exposing two or more compounds to pulsed RF power to deposit alternating low k dielectric sublayers on the substrate, wherein at least one of the two or more compounds is an organosilicon compound.
A method of depositing a low k dielectric film on a substrate, comprising:
- simultaneously exposing two or more compounds to pulsed RF power to deposit alternating low k dielectric sublayers on the substrate, wherein at least two of the compounds are organosilicon compounds and the pulsed RF power comprises pulses delivered for a first period of time at a first frequency and pulses delivered for a second period of time at a second frequency.
A low k dielectric film comprising alternating low k dielectric sublayers, formed by a process comprising:
- exposing two or more compounds to pulsed RF power to deposit alternating low k dielectric sublayers on the substrate, wherein at least one of the two or more compounds is an organosilicon compound.
A low k dielectric film comprising alternating low k dielectric sublayers, formed by a process comprising:
- simultaneously exposing two or more compounds to pulsed RF power to deposit alternating low k dielectric sublayers on the substrate, wherein at least two of the compounds are organosilicon compounds and the pulsed RF power comprises pulses delivered for a first period of time at a first frequency and pulses delivered for a second period of time at a second frequency.
A computer storage medium containing a software routine that, when executed, causes a general purpose computer to control a deposition chamber using a deposition method, wherein the software routine comprises instructions for:
- exposing two or more compounds in the deposition chamber to pulsed RF power to deposit alternating low k dielectric sublayers on a substrate in the deposition chamber, wherein at least one of the two or more compounds is an organosilicon compound.
A computer storage medium containing a software routine that, when executed, causes a general purpose computer to control a deposition chamber using a deposition method, wherein the software routine comprises instructions for:
- simultaneously exposing two or more compounds in the deposition chamber to pulsed RF power to deposit alternating low k dielectric sublayers on a substrate in the deposition chamber, wherein at least one of the compounds is an organosilicon compound and the pulsed RF power comprises pulses delivered for a first period of time at a first frequency and pulses delivered for a second period of time at a second frequency.
Dependencies are inferred from the claim text.