Two-step atomic layer deposition of copper layers
AssigneeAviza Technology, Inc.
InventorYoshihide Senzaki
Life of this patent
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Abstract
A method of forming copper films at low temperatures is provided. The method comprises two steps of forming a copper oxide layer from a non-fluorine containing copper precursor on a substrate and reducing the copper oxide layer to form a copper layer on the substrate. The formation of copper oxide is carried out by atomic layer deposition using a non-fluorine containing copper precursor and an oxygen containing gas at a low temperature. Copper alkoxides, copper β-diketonates and copper dialkylamides are preferred copper precursors. The reduction of copper oxide layer formed is carried out using a hydrogen containing gas at a low temperature.
Claims18
A method of forming a copper layer on a substrate, comprising:
- forming a copper oxide layer from a non-fluorine containing copper precursor on the substrate;
- and
- reducing the copper oxide layer to form a copper layer on the substrate.
A method of forming a copper film on a substrate, comprising:
- introducing a non-fluorine containing copper precursor gas about a substrate provided in a chamber;
- removing excess copper precursor gas from the chamber;
- introducing an oxygen containing gas into the chamber to form a layer of copper oxide on the substrate;
- removing excess ozone from the chamber;
- and
- introducing a hydrogen containing gas into the chamber to reduce the copper oxide layer to form a copper layer.
Dependencies are inferred from the claim text.