Methods of forming ruthenium film by changing process conditions during chemical vapor deposition and ruthenium films formed thereby
AssigneeSamsung Electronics Co., Ltd.
InventorsSeok-jun Won, Cha-young Yoo
Life of this patent
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Abstract
A ruthenium (Ru) film is formed on a substrate as part of a two-stage methodology. During the first stage, the Ru film is formed on the substrate in a manner in which the Ru nucleation rate is greater than the Ru growth rate. During the second stage, the Ru film is formed on the substrate in a manner in which the Ru growth rate is greater than the Ru nucleation rate.
Claims28
A method of forming a ruthenium film, comprising the steps of:
- reacting a ruthenium source gas and oxygen at a first pressure and at a first oxygen gas flow rate to deposit ruthenium on a substrate;
- and
- reacting the ruthenium source gas and oxygen at a second pressure and at a second oxygen gas flow rate to deposit ruthenium on the substrate, wherein at least one of the second pressure and the second oxygen gas flow rate is less than the first pressure and the first oxygen gas flow rate, respectively.
A method of forming a ruthenium film, comprising the steps of:
- reacting a ruthenium source gas and oxygen to deposit ruthenium on a substrate;
- and
- changing at least one of a pressure, an oxygen gas flow rate, and a substrate temperature during the step of reacting the ruthenium source gas and oxygen.
A method of forming a ruthenium film, comprising the steps of:
- forming the ruthenium film on a substrate such that the ruthenium nucleation rate is greater than the ruthenium growth rate;
- and
- forming the ruthenium film on the substrate such that the ruthenium growth rate is greater than the ruthenium nucleation rate.
A ruthenium film, comprising:
- a ruthenium layer having a stratified oxygen concentration.
A ruthenium film, comprising:
- a ruthenium layer having a stratified nucleation.
A method of forming an integrated circuit device, comprising the steps of:
- forming a lower electrode on a substrate;
- forming a dielectric layer on the lower electrode;
- and
- forming an upper electrode on the dielectric layer;
- wherein at least one of the lower electrode and the upper electrode comprises a ruthenium film formed by the following steps:
- forming the ruthenium film by chemical vapor deposition (CVD) using a ruthenium source gas and oxygen as a reactant gas at a first CVD chamber pressure and at a first oxygen gas flow rate;
- and
- forming the ruthenium film by CVD using the ruthenium source gas and oxygen as the reactant gas at a second CVD chamber pressure and at a second oxygen gas flow rate, wherein at least one of the second CVD chamber pressure and the second oxygen gas flow rate is less than the first CVD chamber pressure and the first oxygen gas flow rate, respectively.
A method of forming an integrated circuit device, comprising the steps of:
- forming a lower electrode on a substrate;
- forming a dielectric layer on the lower electrode;
- and
- forming an upper electrode on the dielectric layer;
- wherein at least one of the lower electrode and the upper electrode comprises a ruthenium film formed by the following steps:
- forming the ruthenium film by chemical vapor deposition (CVD) using a ruthenium source gas and oxygen as a reactant gas;
- and
- changing at least one of a CVD chamber pressure, an oxygen gas flow rate, and the substrate temperature during the step of forming the ruthenium film.
A method of forming an integrated circuit device, comprising the steps of:
- forming a lower electrode on a substrate;
- forming a dielectric layer on the lower electrode;
- and
- forming an upper electrode on the dielectric layer;
- wherein at least one of the lower electrode and the upper electrode comprises a ruthenium film formed by the following steps:
- forming the ruthenium film on a substrate such that the ruthenium nucleation rate is greater than the ruthenium growth rate;
- and
- forming the ruthenium film on the substrate such that the ruthenium growth rate is greater than the ruthenium nucleation rate.
Dependencies are inferred from the claim text.