Self boosting technique

A memory system, comprising:

• a first set of storage elements, said first set of storage elements includes a storage element to be programmed;
• a second set of storage elements, said second set of storage elements includes a storage element to be inhibited, said second set of storage elements capable of having a source side channel region with a voltage potential of at least a boosted voltage potential during a programming operation;
• and
• a plurality of word lines, said plurality of word lines includes a first word line connected to said storage element to be programmed and to said storage element to be inhibited to apply a program voltage to said storage element to be programmed and said storage element to be inhibited during said program operation, said plurality of word lines further includes source side word lines connected to other cells in said second set of storage elements to apply a pass voltage to at least a subset of said other storage elements in said second set of storage elements to raise said voltage potential of said source side channel region during said programming operation in addition to said boosted voltage potential.

A memory system, comprising:

• a first means for storing information, said first means includes a first storage element;
• a second means for storing information, said second means includes a second storage element, said second means capable of having a source side channel region during a programming operation;
• and
• means for programming said first storage element while inhibiting said second storage element from being programmed by boosting a voltage potential of a source side channel region of said second means and applying a pass voltage to said second means in addition to said boosting.