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US 2004/0174745 A1Published application
Drain pump for flash memory
AssigneeHynix Semiconductor Inc.
InventorPil Sang Ryoo
Life of this patent
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Abstract
A drain pump for flash memory is disclosed that includes a means for generating a variable voltage depending on a number of bits to be programmed; a pump to pump an input voltage thereof; and a regulator to regulate an output voltage of the pump depending on the variable voltage.
Claims11
A drain pump for a flash memory comprising:
- a means for generating a variable voltage depending on a number of bits to be programmed;
- a pump to pump an input voltage;
- and
- a regulator to regulate an output voltage of the pump depending on the variable voltage.
1 more element
Dependencies are inferred from the claim text.